Intel and Micron have announced the development of the world's first 128Gbit (16GB) multilevel-cell NAND flash memory chip made using a 20nm manufacturing process technology that incorporates high-K metal gate transistors. They are scheduling for mass production of these chips in first half of 2012. This new chip can store 128 GB of data in finger-tip size package.
Vice President of Micron's NAND solutions, Glen Hawk says, “As portable devices get smaller and sleeker, and server demands increase, our customers look to Micron for innovative new storage technologies and system solutions that meet these challenges,” – “Our collaboration with Intel continues to deliver leading NAND technologies and expertise that are critical to building those systems.”
These kind of small chips can be used in tablets, mobiles and are capable of replacing many other old ones. This helps the product designers to either increase their devices' internal memory or can help them in introducing a new improvement in the space available after replacing the older chip with new one.
Source: TechSpot
Vice President of Micron's NAND solutions, Glen Hawk says, “As portable devices get smaller and sleeker, and server demands increase, our customers look to Micron for innovative new storage technologies and system solutions that meet these challenges,” – “Our collaboration with Intel continues to deliver leading NAND technologies and expertise that are critical to building those systems.”
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| (Source: Google Images) |
Source: TechSpot
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